The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Nov. 20, 2002
Ricky Amos, Rhinebeck, NY (US);
Katayun Barmak, White Plains, NY (US);
Diane C. Boyd, Langrangeville, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Meikei Leong, Wappingers Falls, NY (US);
Thomas S. Kanarsky, Hopewell Junction, NY (US);
Jakub Tadeusz Kedzierski, Peekskill, NY (US);
Ricky Amos, Rhinebeck, NY (US);
Katayun Barmak, White Plains, NY (US);
Diane C. Boyd, Langrangeville, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Meikei Leong, Wappingers Falls, NY (US);
Thomas S. Kanarsky, Hopewell Junction, NY (US);
Jakub Tadeusz Kedzierski, Peekskill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming complementary metal oxide semiconductor (CMOS) devices having multiple-threshold voltages which are easily tunable are provided. Total salicidation with a metal bilayer (representative of the first method of the present invention) or metal alloy (representative of the second method of the present invention) is provided. CMOS devices having multiple-threshold voltages provided by the present methods are also described.