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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Rafael C Howell

This inventor holds 23 USPTO granted patents and 8 published patent applications, primarily in Lithography Optimization. Top assignees: Asml Netherlands B.v., Asml Netherlands. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rafael C Howell. Retrieved from https://idiyas.com/inventor/rafael-c-howell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 95.7

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 64(Granted Patents)


Company Filing History:

goldMedal22 out of 5,076 
 
Asml Netherlands B.v.
 patents
silverMedal1 out of 4 
 
Asml Netherlands
 patents

Years Active: 2014-2026

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Areas of Expertise:
Aberration Impact Systems
Wavefront Optimization
Patterning Device
Mask Optimization
Scattering Analysis
Manufacturability
Curvilinear Patterns
Process Models
Lithographic Processes
Simulation Techniques
Source-Mask Optimization
Angular Distribution
23 patents (USPTO):Explore Patents
1. 12762392 - Methods for training machine learning model for computation lithography (2026-10-13),
2. 12210291 - Aberration impact systems, models, and manufacturing processes (2025-01-28),
3. 12092963 - Method of determining characteristic of patterning process based on defect for reducing hotspot (2024-09-17),
4. 11977334 - Wavefront optimization for tuning scanner based on performance matching (2024-05-07),
5. 11972194 - Method for determining patterning device pattern based on manufacturability (2024-04-30),
6. 11789371 - Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device (2023-10-17),
7. 11734490 - Method for determining curvilinear patterns for patterning device (2023-08-22),
8. 11614690 - Methods of tuning process models (2023-03-28),
9. 11586114 - Wavefront optimization for tuning scanner based on performance matching (2023-02-21),
10. 11580289 - Method for determining patterning device pattern based on manufacturability (2023-02-14),
11. 11506984 - Simulation of lithography using multiple-sampling of angular distribution of source radiation (2022-11-22),
12. 11409203 - Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device (2022-08-09),
13. 11232249 - Method for determining curvilinear patterns for patterning device (2022-01-25),
14. 11054750 - Profile aware source-mask optimization (2021-07-06),
15. 11016395 - Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device (2021-05-25),

Title: The Innovative Journey of Rafael C Howell

Introduction: Rafael C Howell, a visionary inventor based in Santa Clara, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Rafael C Howell's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Rafael C Howell has established himself as a leading figure in the innovation landscape. His pioneering work has revolutionized various industries, earning him recognition as a trailblazer in the field of technology.

Collaborations: Throughout his career, Rafael C Howell has collaborated with top research institutions, leading companies, and brilliant minds in the industry. These collaborations have not only fueled his innovative spirit but have also resulted in groundbreaking inventions that have shaped the technological landscape.

Conclusion: In conclusion, Rafael C Howell's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his position as a prominent inventor in Santa Clara, CA. His remarkable journey continues to inspire future generations of inventors to think boldly and create fearlessly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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