The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Mar. 26, 2020
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Xingyue Peng, San Jose, CA (US);

Duan-Fu Stephen Hsu, Fremont, CA (US);

Rafael C. Howell, Santa Clara, CA (US);

Qinglin Li, San Jose, CA (US);

Assignee:

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 30/30 (2020.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70616 (2013.01); G03F 7/705 (2013.01);
Abstract

Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.


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