Qing-Tang Jiang

Title: Innovations of Qing-Tang Jiang

Introduction

Qing-Tang Jiang is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 9 patents to his name, he has made remarkable advancements in the field, particularly in the area of conductive materials and barrier efficiency.

Latest Patents

Among his latest patents is the invention titled "In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability." This patent describes a process where a copper interconnect is enhanced by a transition metal-silicon-nitride barrier, which is co-deposited with silicon through reactive sputtering. This innovative method ensures good adhesion of the copper layer over the barrier. Another notable patent is for a "Semiconductor device with a conductive layer including a copper layer with a dopant." This invention outlines a method for manufacturing a semiconductor device that includes forming a dielectric layer, etching a trench, and creating a conductive layer that incorporates a dopant, which diffuses to the surface during annealing.

Career Highlights

Qing-Tang Jiang is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing more reliable and efficient devices, contributing to the advancement of the industry.

Collaborations

Throughout his career, Jiang has collaborated with notable colleagues, including Kenneth D Brennan and Jiong-Ping Lu. These partnerships have fostered innovation and have led to the successful development of various technologies.

Conclusion

Qing-Tang Jiang's contributions to the field of semiconductor technology are significant and impactful. His innovative patents and collaborations highlight his dedication to advancing technology and improving device reliability.