The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jun. 28, 2001
Applicants:
Richard A. Faust, Plano, TX (US);
Qing-tang Jiang, Austin, TX (US);
Jiong-ping LU, Richardson, TX (US);
Inventors:
Richard A. Faust, Plano, TX (US);
Qing-Tang Jiang, Austin, TX (US);
Jiong-Ping Lu, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A copper interconnect having a transition metal-silicon-nitride barrier (). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (). The copper () is then deposited over the transition metal-silicon-nitride barrier () with good adhesion.
Faust, Richard. (2010). In-situ co-deposition of si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability (U.S. Patent No. 7655555). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7655555
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile