The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
May. 03, 2002
Applicants:
Richard A. Faust, Jr., Plano, TX (US);
Qing-tang Jiang, Shanghai, CN;
Jiong-ping LU, Richardson, TX (US);
Inventors:
Richard A. Faust, Jr., Plano, TX (US);
Qing-Tang Jiang, Shanghai, CN;
Jiong-Ping Lu, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L021/4763 ; H01L021/44 ;
U.S. Cl.
CPC ...
Abstract
In an integrated device, a via is formed in a substrate layer and a barrier layer is formed on the substrate layer in the via. A seed layer is formed on the barrier layer in the via. The seed layer includes a first material and a second material. The first material provides an ability for the second material to maintain an adherence to the barrier layer.