Beijing, China

Qiang Shi

USPTO Granted Patents = 6 

 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2019

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6 patents (USPTO):

Title: Innovations of Qiang Shi in Thin Film Transistors

Introduction

Qiang Shi is a prominent inventor based in Beijing, China. He has made significant contributions to the field of thin film transistors, holding a total of 6 patents. His work focuses on improving the performance and stability of electronic devices through innovative manufacturing methods.

Latest Patents

Qiang Shi's latest patents include advancements in thin film transistors and their manufacturing methods. One notable patent describes a thin film transistor that features a recessed gate insulation layer. This design addresses the issue of wire breakage in the active layer at the channel between the source and drain electrodes. As a result, the performance and stability of the thin film transistor are enhanced, while production costs are reduced. Another patent involves an organic thin film transistor and its manufacturing method, which includes forming an organic semiconductor layer and selectively doping it to optimize performance.

Career Highlights

Qiang Shi is currently employed at BOE Technology Group Co., Ltd., a leading company in the display technology sector. His work at BOE has allowed him to push the boundaries of thin film transistor technology, contributing to the development of more efficient and reliable electronic devices.

Collaborations

Throughout his career, Qiang Shi has collaborated with notable colleagues, including Yingtao Xie and Shihong Ouyang. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Qiang Shi's contributions to the field of thin film transistors exemplify the impact of innovative thinking in technology. His patents not only address existing challenges but also pave the way for future advancements in electronic devices.

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