The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2019

Filed:

Nov. 07, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Honhang Fong, Beijing, CN;

Yingtao Xie, Beijing, CN;

Shihong Ouyang, Beijing, CN;

Shucheng Cai, Beijing, CN;

Qiang Shi, Beijing, CN;

Ze Liu, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/05 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/28 (2006.01); H01L 29/66 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0516 (2013.01); H01L 27/12 (2013.01); H01L 27/283 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 51/052 (2013.01); H01L 51/0545 (2013.01); H01L 51/102 (2013.01); H01L 51/105 (2013.01);
Abstract

A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode () and a gate insulation layer (), the gate insulation layer () is provided with a recess () at a position corresponding to the gate electrode (). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.


Find Patent Forward Citations

Loading…