The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Dec. 04, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Honhang Fong, Beijing, CN;

Yingtao Xie, Beijing, CN;

Shihong Ouyang, Beijing, CN;

Shucheng Cai, Beijing, CN;

Qiang Shi, Beijing, CN;

Ze Liu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/05 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0541 (2013.01); H01L 27/283 (2013.01); H01L 51/0018 (2013.01); H01L 51/052 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01); H01L 27/3274 (2013.01);
Abstract

An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode () and a drain electrode (), and forming an organic semiconductor active layer () in contact with the source electrode () and the drain electrode (); and forming an organic insulating thin film () on a substrate () where the source-drain metal layer and the organic semiconductor active layer () have been formed, thinning the organic insulating thin film () and curing the thinned organic insulating thin film (), or curing the organic insulating thin film () and thinning the cured organic insulating thin film (), to form an organic insulating layer (). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.


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