The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Jul. 16, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yingtao Xie, Bejing, CN;

Shihong Ouyang, Beijing, CN;

Shucheng Cai, Beijing, CN;

Qiang Shi, Beijing, CN;

Ze Liu, Beijing, CN;

Honhang Fong, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0545 (2013.01); H01L 51/0018 (2013.01); H01L 51/0541 (2013.01); H01L 51/0562 (2013.01);
Abstract

The present disclosure provides a thin film transistor (TFT), its manufacturing method, an array substrate and a display device. The method for manufacturing the TFT includes steps of forming patterns of a gate electrode, a source electrode and a drain electrode on a base substrate; and forming a pattern of an active layer and a pattern of a passivation layer covering the active layer by a single patterning process. The passivation layer is made of a negative or positive photoresist, and the active layer is insulated from the gate electrode and electrically connected to the source electrode and the drain electrode.


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