The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2018

Filed:

Jun. 27, 2017
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yingtao Xie, Beijing, CN;

Shihong Ouyang, Beijing, CN;

Shucheng Cai, Beijing, CN;

Qiang Shi, Beijing, CN;

Ze Liu, Beijing, CN;

Honhang Fong, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0015 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01); H01L 51/107 (2013.01); H01L 51/0558 (2013.01);
Abstract

An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.


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