Taoyuan, Taiwan

Po-Kang Ho

This inventor holds 6 USPTO granted patents and 9 published patent applications. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Kang Ho. Retrieved from https://idiyas.com/inventor/po-kang-ho

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 83.3

Average Co-Inventor Count = 4.5

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2018-2026

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6 patents (USPTO):Explore Patents

Title: Innovative Contributions of Inventor Po-Kang Ho in Semiconductor Technology

Introduction: Po-Kang Ho, a prominent inventor based in Taoyuan, Taiwan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio consisting of four patents, Ho's innovative work has the potential to reshape the future of semiconductor devices.

Latest Patents: Among his latest contributions, Po-Kang Ho has developed several notable patents. The first is focused on a method for performing an annealing process to improve the quality of FinFET semiconductors. This patent details a semiconductor device featuring a fin structure that protrudes vertically, with a reduced lateral dimension. After forming a semiconductor layer on this fin structure, an annealing process is executed, followed by the creation of a dielectric layer over the fin structure.

Another significant patent describes a semiconductor structure and the method for its formation. This invention includes a first semiconductor fin and a second semiconductor fin, both extending from a substrate, alongside a dielectric fin. The design incorporates specific isolation regions between the fin structures, highlighting a detailed impurity concentration system which optimizes device performance.

Career Highlights: Po-Kang Ho has garnered recognition for his expertise while working at Taiwan Semiconductor Manufacturing Company Limited. His role at this leading firm has allowed him to contribute significantly to advancements in semiconductor technology, particularly in the areas of FinFET designs and manufacturing processes.

Collaborations: Ho collaborates with talented professionals such as Tzung-Yi Tsai and Yen-Ming Chen, who work alongside him in pushing the boundaries of semiconductor innovations. Their teamwork exemplifies the collaborative spirit necessary for groundbreaking developments in technology.

Conclusion: In conclusion, Po-Kang Ho's inventive work and patent portfolio reflect his commitment to enhancing semiconductor technology. His latest innovations not only advance the capabilities of semiconductor devices but also set new standards in the industry. As technology continues to evolve, Ho’s contributions will undeniably play a vital role in the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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