Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Kang Ho

Yen-Ming Chen

Tsung-Lin Lee

Tzung-Yi Tsai

Yee-Chia Yeo

Huicheng Chang

Szu-Ying Chen

Cheng-Ta Wu

Yu-Ting Lin

Ting-Chun Wang

Sen-Hong Syue

Po-Kai Hsiao

A semiconductor device is provided. The semiconductor device has a fin structure that protrudes vertically upwards. A lateral dimension of the fin structure is reduced. A semiconductor layer is formed on the fin structure after the reducing of the lateral dimension. An annealing process is performed to the semiconductor device after the forming of the semiconductor layer. A dielectric layer is formed over the fin structure after the performing of the annealing process.

Performing annealing process to improve Fin quality of a FinFET semiconductor

A device includes a first semiconductor fin extending from a substrate, a second semiconductor fin extending from the substrate, a dielectric fin over the substrate, a first isolation region between the first semiconductor fin and the dielectric fin, and a second isolation region between the first semiconductor fin and the second semiconductor fin. The first semiconductor fin is disposed between the second semiconductor fin and the dielectric fin. The first isolation region has a first concentration of an impurity. The second isolation region has a second concentration of the impurity. The second concentration is less than the first concentration. A top surface of the second isolation region is disposed closer to the substrate than a top surface of the first isolation region.

Semiconductor structure and method of forming the same

Performing annealing process to improve fin quality of a FinFET semiconductor

A FinFET including a substrate, a plurality of isolation structures, a plurality of blocking layers, and a gate stack is provided. The substrate has a plurality of semiconductor fins. The isolation structures are located on the substrate to isolate the semiconductor fins. In addition, the semiconductor fins protrude from the isolation structures. The blocking layers are located between the isolation structures and the semiconductor fins. The material of the blocking layers is different from the material of the isolation structures. The gate stack is disposed across portions of the semiconductor fins, portions of the blocking layers and portions of the isolation structures. In addition, a method for fabricating the FinFET is also provided.

Fin field effect transistor and method for fabricating the same

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Taoyuan, Taiwan

Po-Kang Ho