The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Feb. 16, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
PO-Kang Ho, Taoyuan, TW;
Kuo-Ju Chen, Taichung, TW;
Wei-Ting Chang, Hsinchu, TW;
Wei-Fu Wang, Hsinchu, TW;
Li-Ting Wang, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
Yi-Chao Wang, Hsinchu, TW;
Tsai-Yu Huang, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a fin protruding from a semiconductor substrate; forming a dummy gate stack over the fin, wherein forming the dummy gate stack includes depositing a layer of amorphous material over the fin; performing an anneal process on the layer of amorphous material, wherein the anneal process recrystallizes the layer of amorphous material into a layer of polycrystalline material, wherein the anneal process includes heating the layer of amorphous material for less than one millisecond; and patterning the layer of polycrystalline material; forming an epitaxial source/drain region in the fin adjacent the dummy gate stack; and removing the dummy gate stack and replacing the dummy gate stack with a replacement gate stack.