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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12142490 B1

PDFFull Text
Date of Patent:
Nov. 12, 2024

Filed:

Apr. 11, 2022

Performing annealing process to improve fin quality of a finfet semiconductor

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tzung-Yi Tsai, Taoyuan, TW;

Yen-Ming Chen, Chu-Pei, TW;

Tsung-Lin Lee, Hsinchu, TW;

Po-Kang Ho, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

HAYNES AND BOONE, LLP

Primary Examiner:

Tony Tran

Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 29/161 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/76832 (2013.01); H01L 29/161 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device has a fin structure that protrudes vertically upwards. A lateral dimension of the fin structure is reduced. A semiconductor layer is formed on the fin structure after the reducing of the lateral dimension. An annealing process is performed to the semiconductor device after the forming of the semiconductor layer. A dielectric layer is formed over the fin structure after the performing of the annealing process.

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Tsai, Tzung-Yi. (2024). Performing annealing process to improve fin quality of a finfet semiconductor (U.S. Patent No. 12142490). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12142490

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