The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Feb. 26, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Yu-Ting Lin, Tainan, TW;
Po-Kai Hsiao, Changhua County, TW;
Po-Kang Ho, Taoyuan, TW;
Ting-Chun Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A FinFET including a substrate, a plurality of isolation structures, a plurality of blocking layers, and a gate stack is provided. The substrate has a plurality of semiconductor fins. The isolation structures are located on the substrate to isolate the semiconductor fins. In addition, the semiconductor fins protrude from the isolation structures. The blocking layers are located between the isolation structures and the semiconductor fins. The material of the blocking layers is different from the material of the isolation structures. The gate stack is disposed across portions of the semiconductor fins, portions of the blocking layers and portions of the isolation structures. In addition, a method for fabricating the FinFET is also provided.