The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jul. 22, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuo-Ju Chen, Taichung, TW;
Wei-Ting Chang, Hsinchu, TW;
PO-Kang Ho, Taoyuan, TW;
Su-Hao Liu, Chiayi County, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method includes forming a fin structure over a substrate; depositing a dummy gate layer over the substrate and the fin structure; etching back the dummy gate layer; performing an implantation process to the dummy gate layer to form an implantation region in the dummy gate layer, wherein a vertical thickness of the dummy gate layer is greater than a vertical thickness of the implantation region; forming a patterned hard mask stack over the implantation region; patterning the implantation region and the dummy gate layer by using the patterned hard mask stack as an etch mask to form a dummy gate structure over the fin structure; and replacing the dummy gate structure with a metal gate structure.