Tainan, Taiwan

Po-Hsien Li

This inventor holds 8 USPTO granted patents. Top assignee: Sinopower Semiconductor, Inc.. Active years: 2012-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Hsien Li. Retrieved from https://idiyas.com/inventor/po-hsien-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 75.0

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 15(Granted Patents)


Location History:

  • Tainan County, TW (2012)
  • Tainan, TW (2014 - 2018)

Company Filing History:


Years Active: 2012-2018

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8 patents (USPTO):Explore Patents

Title: Innovative Contributions of Po-Hsien Li in Power Semiconductor Technology

Introduction: Po-Hsien Li, an accomplished inventor based in Tainan, Taiwan, has made significant advancements in the field of power semiconductor technology. With a total of 8 patents to his name, Li has demonstrated a remarkable ability to innovate and improve existing technologies, contributing to the progress of the semiconductor industry.

Latest Patents: Among his latest patents, Po-Hsien Li has developed groundbreaking technologies such as the "Double Gate Trench Power Transistor and Manufacturing Method Thereof." This invention introduces a gate structure featuring an epitaxial layer and a trench structure that includes multiple gate structures and a shielding electrode structure. The design incorporates a deep trench portion alongside two shallow trench portions that enhance the performance and efficiency of the power transistor. Another notable patent is the "Trench Power Semiconductor Device," which details a trench gate structure within a cell trench of an epitaxial layer. This device utilizes a unique configuration of dielectric layers and a shielding layer, facilitating improved performance and reliability.

Career Highlights: Throughout his career at Sinopower Semiconductor, Inc., Po-Hsien Li has focused on developing innovative solutions that address the challenges faced by the semiconductor industry. His extensive background in power semiconductor devices showcases his commitment to advancing technology and enhancing device performance. With each invention, Li continues to establish himself as a leader in this field.

Collaborations: Po-Hsien Li works alongside talented colleagues such as Wei-Chieh Lin and Jia-Fu Lin. Their collaborative efforts contribute to the innovative advancements at Sinopower Semiconductor, Inc., fostering an environment of creativity and discovery.

Conclusion: Po-Hsien Li’s contributions to power semiconductor technology through his inventive patents illustrate his dedication to innovation. His work not only advances the capabilities of semiconductor devices but also positions him as a key player in the technological landscape of Taiwan and beyond. As he continues to innovate, Po-Hsien Li remains an inspiring figure in the realm of inventions and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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