The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Jul. 20, 2010
Wei-chieh Lin, Hsinchu, TW;
Ho-tai Chen, Taipei County, TW;
Jia-fu Lin, Yilan County, TW;
Po-hsien LI, Tainan County, TW;
Wei-Chieh Lin, Hsinchu, TW;
Ho-Tai Chen, Taipei County, TW;
Jia-Fu Lin, Yilan County, TW;
Po-Hsien Li, Tainan County, TW;
Sinopower Semiconductor Inc., Hsinchu Science Park, Hsinchu, TW;
Abstract
A laterally diffused metal-oxide-semiconductor device includes a substrate, a gate dielectric layer, a gate polysilicon layer, a source region, a drain region, a body region, a first drain contact plug, a source polysilicon layer, an insulating layer, and a source metal layer. The source polysilicon layer disposed on the gate dielectric layer above the drain region can serve as a field plate to enhance the breakdown voltage and to increase the drain-to-source capacitance. In addition, the first drain contact plug of the present invention can reduce the drain-to-source on-resistance and the horizontal extension length.