The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Nov. 26, 2014
Sinopower Semiconductor, Inc., Hsinchu, TW;
Po-Hsien Li, Tainan, TW;
Guo-Liang Yang, Hsinchu, TW;
SINOPOWER SEMICONDUCTOR, INC., Hsinchu, TW;
Abstract
A power semiconductor device having low on-state resistance includes a substrate having an epitaxial layer formed thereon, a gate structure, a termination structure, and a patterned conductive layer. The epitaxial layer has at least a first trench and a second trench. The gate structure is embedded in the first trench, including a gate electrode and a shielding electrode disposed under the gate electrode. The termination structure is embedded in the second trench, including a termination electrode. The patterned conductive layer is disposed above the epitaxial layer. Specially, the shield electrode of the gate structure and the termination electrode of the termination structure are configured to receive the gate voltage. The patterned conductive layer is configured to electrically contact said gate electrode and termination electrodes by a first contact plug and a second contact plug respectively.