Hsinchu, Taiwan

Guo-Liang Yang

USPTO Granted Patents = 10 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 2011-2018

Loading Chart...
10 patents (USPTO):Explore Patents

Title: A Closer Look at Inventor Guo-Liang Yang

Introduction

Guo-Liang Yang, a prominent inventor based in Hsinchu, Taiwan, has made significant contributions to the field of power semiconductor technology. With an impressive portfolio of 10 patents, his innovative work has paved the way for advancements in semiconductor devices.

Latest Patents

Among his latest inventions, Guo-Liang Yang has developed a trench power semiconductor device that features a sophisticated trench gate structure in a cell trench of an epitaxial layer. This device incorporates multiple dielectric layers, allowing for enhanced performance and efficiency. The design includes a first dielectric layer, a second dielectric layer made from distinct material, a gate electrode, a third dielectric layer, and a shielding layer. This multi-layer architecture, enhanced through selective etching on the second dielectric layer, achieves a recess that optimizes the device's functionality.

Additionally, Yang's trenched power semiconductor element showcases a trench-gate structure integrated within the epitaxial layer. This element includes key components such as a shielding electrode and insulating layers, which work together to provide insulation and separation from the epitaxial layer, thus ensuring optimal device performance. His inventions represent a significant leap in semiconductor technology, illustrating his dedication to innovation.

Career Highlights

Guo-Liang Yang has held key positions in reputable companies, including Sinopower Semiconductor, Inc. and Anpec Electronics Corporation. His roles in these organizations have allowed him to leverage his expertise in semiconductor technology to drive meaningful advancements in the industry.

Collaborations

Throughout his career, Yang has collaborated with talented professionals like Wei-Chieh Lin and Jia-Fu Lin. These partnerships have contributed to his innovative endeavors, illustrating the importance of teamwork in the development of groundbreaking technologies.

Conclusion

Guo-Liang Yang's contributions to the semiconductor field demonstrate his exceptional talent and commitment to innovation. His latest patents highlight the advancements in power semiconductor devices, and his career reflects significant achievements within reputable companies. As he continues to push the boundaries of technology, Yang remains a key figure in the world of inventions and innovation.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…