The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jul. 20, 2010
Wei-chieh Lin, Hsinchu, TW;
Guo-liang Yang, Hsinchu, TW;
Jia-fu Lin, Yilan County, TW;
Shian-hau Liao, Taichung, TW;
Wei-Chieh Lin, Hsinchu, TW;
Guo-Liang Yang, Hsinchu, TW;
Jia-Fu Lin, Yilan County, TW;
Shian-Hau Liao, Taichung, TW;
Sinopower Semiconductor Inc., Hsinchu Science Park, Hsinchu, TW;
Abstract
A power semiconductor device having low gate input resistance and a manufacturing method thereof are provided. The power semiconductor device includes a substrate, at least a trench transistor, a conductive layer, a metal contact plug, an insulating layer, an interlayer dielectric, a gate metal layer, and a source metal layer. The metal contact plug can serve as a buried gate metal bus line, and the metal contact plug can pass under the source metal layer and keeps the area of the source metal layer complete. Accordingly, the present invention can provide a lower gate input resistance without dividing the source metal layer, so the source metal layer can have a larger and complete area for the following packaging and bonding process.