The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Nov. 11, 2009
Wei-chieh Lin, Hsinchu, TW;
Jen-hao Yeh, Kaohsiung County, TW;
Guo-liang Yang, Hsinchu, TW;
Jia-fu Lin, Yilan County, TW;
Wei-Chieh Lin, Hsinchu, TW;
Jen-Hao Yeh, Kaohsiung County, TW;
Guo-Liang Yang, Hsinchu, TW;
Jia-Fu Lin, Yilan County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
An overlapping trench gate semiconductor device includes a semiconductor substrate, a plurality of shallow trenches disposed on the semiconductor substrate, a first conductive layer disposed in the shallow trenches, a plurality of deep trenches respectively disposed in each shallow trench, a second conductive layer disposed in the deep trenches, a source metal layer and a gate metal layer. Each of the deep trenches extends into the semiconductor substrate under each shallow trench. The source metal layer is electrically connected to the second conductive layer, and the gate metal layer is electrically connected to the first conductive layer.