The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Jan. 25, 2016
Sinopower Semiconductor, Inc., Hsinchu, TW;
Po-Hsien Li, Tainan, TW;
Guo-Liang Yang, Hsinchu, TW;
Jia-Fu Lin, Yilan County, TW;
Wei-Chieh Lin, Hsinchu, TW;
SINOPOWER SEMICONDUCTOR, INC., Hsinchu, TW;
Abstract
A trench power transistor is provided. The trench gate structure of the trench power transistor includes at least one insulting layer, a gate electrode, and a shielding electrode, which are disposed in a trench of an epitaxial layer. The insulating layer formed on an inner wall of the active trench to isolate an epitaxial layer from the gate and the shielding electrodes. The insulating layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer. The first and second dielectric layers extend from an upper portion of the inner wall to a lower portion of the inner wall of the active trench. The third dielectric layer is formed on the second dielectric layer and located at the lower portion of the active trench. A portion of the second dielectric layer is interposed between the first and third dielectric layers.