The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Nov. 08, 2009
Wei-chieh Lin, Hsinchu, TW;
Guo-liang Yang, Hsinchu, TW;
Jen-hao Yeh, Kaohsiung County, TW;
Jia-fu Lin, Yilan County, TW;
Wei-Chieh Lin, Hsinchu, TW;
Guo-Liang Yang, Hsinchu, TW;
Jen-Hao Yeh, Kaohsiung County, TW;
Jia-Fu Lin, Yilan County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A power semiconductor device with drain voltage protection includes a semiconductor substrate, at least a trench gate transistor device and at least a trench ESD protection device. An upper surface of the semiconductor substrate has a first trench and a second trench. The trench gate transistor device is disposed in the first trench and the semiconductor substrate. The trench ESD protection device is disposed in the second trench, and includes a first doped region, a second doped region and a third doped region. The first doped region and the third doped region are respectively electrically connected to a drain and a gate of the trench gate transistor device.