The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Aug. 06, 2009
Wei-chieh Lin, Hsinchu, TW;
Li-cheng Lin, Taipei, TW;
Hsin-yu Hsu, Chiayi County, TW;
Ho-tai Chen, Taipei County, TW;
Jen-hao Yeh, Kaohsiung County, TW;
Guo-liang Yang, Hsinchu, TW;
Chia-hui Chen, Taichung County, TW;
Shih-chieh Hung, Changhua County, TW;
Wei-Chieh Lin, Hsinchu, TW;
Li-Cheng Lin, Taipei, TW;
Hsin-Yu Hsu, Chiayi County, TW;
Ho-Tai Chen, Taipei County, TW;
Jen-Hao Yeh, Kaohsiung County, TW;
Guo-Liang Yang, Hsinchu, TW;
Chia-Hui Chen, Taichung County, TW;
Shih-Chieh Hung, Changhua County, TW;
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A semiconductor device having integrated MOSFET and Schottky diode includes a substrate having a MOSFET region and a Schottky diode region defined thereon; a plurality of first trenches formed in the MOSFET region; and a plurality of second trenches formed in the Schottky diode region. The first trenches respectively including a first insulating layer formed over the sidewalls and bottom of the first trench and a first conductive layer filling the first trench serve as a trenched gate of the trench MOSFET. The second trenches respectively include a second insulating layer formed over the sidewalls and bottom of the second trench and a second conductive layer filling the second trench. A depth and a width of the second trenches are larger than that of the first trenches; and a thickness of the second insulating layer is larger than that of the first insulating layer.