The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Jan. 13, 2016
Sinopower Semiconductor, Inc., Hsinchu, TW;
Po-Hsien Li, Tainan, TW;
Jia-Fu Lin, Yilan County, TW;
Chia-Cheng Chen, Taoyuan, TW;
Wei-Chieh Lin, Hsinchu, TW;
SINOPOWER SEMICONDUCTOR, INC., Hsinchu, TW;
Abstract
A double gate trench power transistor and manufacturing method thereof are provided. The double gate trench power transistor gate structure includes an epitaxial layer, a trench structure formed in the epitaxial layer, at least two gate structures, and a shielding electrode structure. The trench structure includes a deep trench portion and two shallow trench portions respectively adjacent to two opposite sides of the deep trench portion. Each of the gate structures formed in each of the shallow trench portions includes a gate insulating layer and a gate electrode. The gate insulating layer has a first dielectric layer, a second dielectric layer and a third dielectric layer. The second dielectric layer is interposed between the first and third dielectric layers. Additionally, a portion of the gate insulating layer is in contact with a shielding dielectric layer of the shielding electrode structure.