The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Sep. 03, 2013
Sinopower Semiconductor, Inc., Hsinchu, TW;
Po-Hsien Li, Tainan, TW;
Sinopower Semiconductor, Inc., Hsinchu, TW;
Abstract
A trench power device includes a semiconductor layer, a trench gate structure, a trench source structure, and a contact. The semiconductor layer has an epitaxial layer, a doped body region, a S/D region, and a doped contact-carrying region. The doped body region is formed in the epitaxial layer, the S/D region is formed in the doped body region, and the doped contact-carrying region is formed in the doped body region and outside a projecting portion defined by orthogonally projecting from the S/D region to the doped body region. The trench gate structure is embedded in the S/D region, the doped body region, and the epitaxial layer. The trench source structure is embedded in the doped body region and the epitaxial layer, and is connected to the doped contact-carrying region. The contact is connected to the S/D region and the doped contact-carrying region.