Pei-Yuan Li

Title: Innovations of Pei-Yuan Li

Introduction

Pei-Yuan Li is a notable inventor based in New Taipei, Taiwan. He has made significant contributions to the field of memory devices, holding a total of seven patents. His work focuses on enhancing the efficiency and functionality of memory circuits.

Latest Patents

One of his latest patents is a memory device that includes a first memory cell with a first transistor and a second transistor coupled in parallel. The gates of these transistors are interconnected, allowing them to pass different layers while overlapping. This innovative design aims to improve memory performance. Another recent patent involves a multi-stage bit line pre-charge system. This system includes a bit cell that responds to a bit line signal and a bit line bar signal, configured to store a bit of data. The pre-charge circuit is designed to charge one of the signal lines before a read operation, featuring individually controllable components for enhanced efficiency.

Career Highlights

Pei-Yuan Li has worked with prominent organizations such as Taiwan Semiconductor Manufacturing Company and Tsinghua University. His experience in these institutions has allowed him to develop cutting-edge technologies in the semiconductor and memory device sectors.

Collaborations

Throughout his career, Pei-Yuan Li has collaborated with talented individuals, including Wei-Cheng Wu and Kao-Cheng Lin. These partnerships have contributed to his innovative projects and advancements in memory technology.

Conclusion

Pei-Yuan Li's contributions to memory device technology and his collaborations with esteemed colleagues highlight his impact on the field. His innovative patents continue to shape the future of memory circuits and semiconductor technology.