The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Jul. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien Hui Huang, Tainan, TW;

Kao-Cheng Lin, Taipei, TW;

Wei Min Chan, New Taipei, TW;

Shang Lin Wu, Hsinchu County, TW;

Chia-Chi Hung, Hsinchu, TW;

Wei-Cheng Wu, Hsinchu, TW;

Chia-Che Chung, Hsinchu, TW;

Pei-Yuan Li, New Taipei, TW;

Chien-Chen Lin, Kaohsiung, TW;

Yung-Ning Tu, Changhua County, TW;

Yen Lin Chung, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 5/06 (2006.01); G11C 11/56 (2006.01); H10B 20/00 (2023.01);
U.S. Cl.
CPC ...
H10B 20/50 (2023.02); G11C 5/063 (2013.01); G11C 11/5692 (2013.01);
Abstract

A memory device is provided which includes a first memory cell including a first transistor and a second transistor coupled to the first transistor in parallel. Gates of the first transistor and the second transistor are coupled to each other, and the gates of the first transistor and the second transistor pass different layers and overlap with each other. Types of the first transistor and the second transistor are the same.


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