Norikazu Hashimoto

Title: Norikazu Hashimoto: Innovator in Field Effect Transistors

Introduction

Norikazu Hashimoto is a prominent inventor based in Hachioji, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors (FETs). With a total of 12 patents to his name, Hashimoto's work has had a lasting impact on the industry.

Latest Patents

One of Hashimoto's latest patents involves a field effect transistor formed on a semi-insulator or compound semiconductor substrate. This innovative design includes a first semiconductor layer that forms a source region, a drain region, and a channel layer. Additionally, a second semiconductor layer is incorporated, which has a reverse conduction type to that of the first layer. This second layer is doped to ensure it is totally depleted, allowing a portion adjacent to the substrate to remain conductive. This structure effectively prevents the short channel effect and soft errors caused by alpha particles. Another notable patent focuses on an FET structure that enhances alpha particle immunity, particularly in a semi-insulating substrate. This design includes a layer that prevents both electrons and holes generated by alpha particle incidence from being injected into the FET.

Career Highlights

Throughout his career, Norikazu Hashimoto has worked with esteemed companies such as Hitachi, Ltd. and Showa Denko K.K. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Hashimoto has collaborated with notable colleagues, including Masaharu Kubo and Ryoichi Hori. These partnerships have further enriched his work and advancements in the field.

Conclusion

Norikazu Hashimoto's contributions to the development of field effect transistors demonstrate his innovative spirit and technical expertise. His patents reflect a commitment to enhancing semiconductor technology, making him a significant figure in the industry.