The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1977
Filed:
Mar. 05, 1971
Applicant:
Inventors:
Minoru Nagata, Kodaira, JA;
Toshiaki Masuhara, Tokorozawa, JA;
Masaharu Kubo, Hachioji, JA;
Norikazu Hashimoto, Hachioji, JA;
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 41 ; 357 23 ; 357 52 ;
Abstract
An enhancement-type and a depletion-type metal-insulator-semiconductor field effect transistor are formed on a common substrate of silicon and are electrically isolated from each other by a plurality of layers including, for example, a first layer of SiO.sub.2, a second layer of Al.sub.2 O.sub.3 capable of inducing holes in the surface portion of the substrate, and a third layer of SiO.sub.2, and the relation between the thicknesses of these layers is suitably selected for attaining the satisfactory isolation between these transistors.