The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1983
Filed:
Apr. 20, 1979
Yoshio Sakai, Hachioji, JP;
Toshiaki Masuhara, Hachioji, JP;
Osamu Minato, Kokubunji, JP;
Toshio Sasaki, Hachioji, JP;
Hisao Katto, Hinodemachi, JP;
Norikazu Hashimoto, Tokorozawa, JP;
Shin-ichi Muramatsu, Hachioji, JP;
Akihiro Tomozawa, Hinodemachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device including at least a resistance element formed of polycrystalline silicon having a high resistivity. An electrode is provided on the high resistance polycrystalline silicon region with a silicon dioxide film and a silicon nitride film being interposed therebetween. The electrode is coupled to the ground potential. In this manner, high stability is obtained in the behavior of the resistance element inasmuch as the formation of a parasitic MOS device under said high resistance region is suppressed, and the threshold voltage of any such MOS device is made raised.