Akihiro Tomozawa

Title: Akihiro Tomozawa: Innovator in Semiconductor Technology

Introduction

Akihiro Tomozawa is a prominent inventor based in Kodaira, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the stability and efficiency of semiconductor devices.

Latest Patents

One of his latest patents involves a semiconductor device that includes a resistance element formed of polycrystalline silicon with high resistivity. This design features an electrode placed on the high resistance region, with a silicon dioxide film and a silicon nitride film interposed. This configuration helps achieve high stability in the behavior of the resistance element by suppressing the formation of a parasitic MOS device, thereby raising the threshold voltage of any such device.

Another notable patent is a method for making integrated circuits that prevents the formation of a parasitic PNPN thyristor in integrated circuits containing at least one NPN transistor. This method involves forming a layer of semiconductor material of a conductivity type opposite to that of the substrate, along with an isolation region and diffusion layers that enhance the performance of the NPN transistor.

Career Highlights

Akihiro Tomozawa is currently employed at Hitachi, Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits and semiconductor devices.

Collaborations

Throughout his career, Tomozawa has collaborated with notable colleagues, including Kensuke Nakata and Akira Kikuchi. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Akihiro Tomozawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic devices and integrated circuits.