The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1976
Filed:
Sep. 26, 1973
Applicant:
Inventors:
Akira Nagase, Kodaira, JA;
Masayasu Tsunematsu, Kodaira, JA;
Norio Anzai, Tokorozawa, JA;
Akihiro Tomozawa, Kodaira, JA;
Assignee:
Hitachi, Ltd., , JA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156 17 ; 29571 ; 148187 ; 156 11 ; 156 13 ; 357 22 ; 357 23 ; 427 88 ;
Abstract
A method of producing an MIS structure having self-alignment construction, wherein an insulating film is formed on the surface of a semiconductor substrate, a semiconductor layer is formed on a selected area of the insulating film, parts of the insulating film are etched using the semiconductor layer as a mask, and the surface of the semiconductor layer is etched in such manner that the underlying insulating film may not be etched, whereby the marginal portion of the semiconductor layer which otherwise projects laterally beyond the underlying insulating film is caused to recede.