Company Filing History:
Years Active: 1976
Title: Akira Nagase: Innovator in Semiconductor Technology
Introduction
Akira Nagase is a prominent inventor based in Kodaira, Japan. He is known for his contributions to semiconductor technology, particularly in the development of methods that enhance the efficiency and functionality of semiconductor structures.
Latest Patents
Nagase holds a patent for a "Method of producing MIS structure." This innovative method involves creating a Metal-Insulator-Semiconductor (MIS) structure with self-alignment construction. The process includes forming an insulating film on a semiconductor substrate, followed by the formation of a semiconductor layer on a selected area of the insulating film. Parts of the insulating film are then etched using the semiconductor layer as a mask, ensuring that the underlying insulating film remains intact. This technique allows for the marginal portion of the semiconductor layer, which would otherwise extend beyond the insulating film, to recede effectively.
Career Highlights
Throughout his career, Akira Nagase has made significant strides in the field of semiconductor technology. His work has been instrumental in advancing the production methods of MIS structures, which are crucial for various electronic applications. He is currently associated with Hitachi, Ltd., a leading company in technology and innovation.
Collaborations
Nagase has collaborated with notable colleagues, including Masayasu Tsunematsu and Norio Anzai, who have contributed to his research and development efforts in semiconductor technology.
Conclusion
Akira Nagase's innovative work in semiconductor technology, particularly his patented method for producing MIS structures, showcases his expertise and commitment to advancing the field. His contributions continue to influence the development of efficient semiconductor devices.