The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 1985
Filed:
Jun. 01, 1984
Applicant:
Inventors:
Yoshifumi Kawamoto, Kanagawa, JP;
Hiroshi Kawakami, Hachioji, JP;
Tokuo Kure, Kokubunji, JP;
Shinichi Tachi, Hachioji, JP;
Norikazu Hashimoto, Hachioji, JP;
Tsuyoshi Takaichi, Fujisawa, JP;
Assignees:
Showa Denko K.K., Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156653 ; 156657 ; 1566591 ; 2041 / ; 252 791 ;
Abstract
A dry-etching gas suitable for selective etching of silicon nitride and a process for selectively dry-etching silicon nitride with the dry-etching gas are disclosed. Silicon nitride can be dry-etched with a higher selectivity or at a higher etching rate than silicon dioxide and silicon, and a process for fabricating semi-conductor devices can be simplified and devices with a novel structure can be realized.