The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1982
Filed:
Jul. 24, 1980
Yoshio Sakai, Hachioji, JP;
Mitsumasa Koyanagi, Kokubunji, JP;
Hideo Sunami, Hinodemachi, JP;
Norikazu Hashimoto, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor memory comprising a memory cell disposed on a p-type semiconductor substrate and including an insulated-gate field effect transistor and a storage capacitor. The storage capacitor comprises: an insulator capacitor including a first electrode disposed on the substrate, a film of Si.sub.3 N.sub.4 disposed on the first electrode, and a second electrode disposed on the Si.sub.3 N.sub.4 film; and a pn junction capacitor including a first n-type impurity region for constituting either the source or drain of the insulated-gate field effect transistor, and a second p-type impurity region disposed in contact with the first impurity region and having a higher impurity concentration than the substrate.