The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1982
Filed:
Jun. 01, 1981
Ryoichi Hori, Tokyo, JP;
Masaharu Kubo, Hachioji, JP;
Norikazu Hashimoto, Tokorozawa, JP;
Shigeru Nishimatsu, Kokubunji, JP;
Kiyoo Itoh, Higashi-kurume, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A first semiconductor circuit element including a first electrode is formed on a semiconductor substrate, an insulating layer for insulating the first electrode is formed on the first electrode, and a first opening is provided in a part of this insulating layer. Subsequently, a second semiconductor circuit element is formed by forming a second electrode overlaying in part the insulating layer at an area other than the first opening and, a subsidiary conductive layer is formed in the first opening. Another insulating layer is formed on the structure thus formed, whereupon second and third openings are respectively provided in this latter insulating layer. First and second conductors are respectively deposited in the second and third openings, whereby electrical contact to the first and second electrodes are provided, with contact to the first electrode being via the subsidiary conductive layer.