Higashikurume, Japan

Kiyoo Itoh

This inventor holds 222 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Semiconductor Devices (CPC class 365226). Top assignees: Hitachi, Ltd., Renesas Technology Corp., Hitachi Vlsi Engineering Corp.. Active years: 1976-2018.

USPTO Granted Patents = 222 

% Patents Active = 71.2

 

Average Co-Inventor Count = 3.5

ph-index = 34

Forward Citations = 4,375(Granted Patents)

Forward Citations (Not Self Cited) = 4,145(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Kodaira, JA (1976)
  • Higashi-kurume, JA (1977 - 1978)
  • Higashi, JP (1991)
  • Higashihurume, JP (1993)
  • Higashi-kurame, JP (1999)
  • Higashikurume-shi, JP (2003)
  • Higashi-kurume-shi, Tokyo, JP (2005)
  • Higashikurume, JP (1978 - 2015)
  • Tokyo, JP (1990 - 2018)

Company Filing History:


Years Active: 1976-2018

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Areas of Expertise:
Static Random Access Memory
Semiconductor Device
CMOS Circuit
Power Reduction Mechanism
Storage Device
Voltage Supply
Memory Cell
Fully Depleted Silicon
Integrated Circuits
Double Gated Transistors
Leakage Current
Memory Arrangements
222 patents (USPTO):Explore Patents

Title: Kiyoo Itoh: Pioneering Innovations in Semiconductor Devices

Introduction:

Kiyoo Itoh, a prolific inventor based in Higashikurume, Japan, has made significant contributions to the field of semiconductor devices. With an impressive tally of 222 patents, his expertise and ingenuity have shaped the technological landscape. This article explores Itoh's latest patents, career highlights, collaborations, and his role in advancing innovation in the semiconductor industry.

Latest Patents:

Itoh's recent patents showcase his innovative approaches in the design of static random access memory (SRAM) and semiconductor devices. One of his notable inventions is a novel SRAM configuration that ensures stable and reliable memory operation. By applying different voltage differences across specific power supply rails, Itoh optimized the performance of the memory cells, enhancing the overall functionality of the SRAM.

Additionally, Itoh's semiconductor device design demonstrated ingenuity in terms of its sense amplifier circuit. He integrated cross-coupled transistors with control voltage-regulated third and fourth transistors, ensuring efficient amplification and retention of data during the device's operation. This invention contributed to the enhancement of bit line potential maintenance and overall data retention capabilities.

Career Highlights:

Throughout his career, Itoh has worked with esteemed technology companies such as Hitachi Co., Ltd. and Renesas Technology Corp. His association with these industry leaders further exemplifies his expertise and the recognition he has garnered in the semiconductor domain. Itoh's work has not only influenced product development but has also driven significant advances in manufacturing processes and circuit design.

Collaborations:

During his career, Itoh has collaborated with notable colleagues, forming strong partnerships that have fueled innovation in the field. Notably, he has worked closely with Takeshi Sakata and Masashi Horiguchi, both highly skilled professionals in their own right. These partnerships have undoubtedly fostered an environment of collaboration, leading to groundbreaking advancements and cutting-edge inventions.

Conclusion:

Kiyoo Itoh's extensive patent portfolio and contributions to the semiconductor industry highlight his talent and dedication to innovation. Through his expertise in the design of SRAM and semiconductor devices, Itoh revolutionized memory operations and data retention capabilities. His collaborations with esteemed professionals and employment with renowned companies further solidify his impact on the field. Itoh's work will continue to shape future advancements in semiconductor technology, leaving an indelible mark on the industry as a whole.

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