The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

May. 20, 2016
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Kiyoo Itoh, Tokyo, JP;

Amara Amara, Sceaux, FR;

Khaja Ahmad Shaik, Issy-les-Moulineaux, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); G11C 11/419 (2006.01); G11C 5/14 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/412 (2013.01); G11C 5/14 (2013.01); G11C 7/12 (2013.01);
Abstract

A static random access memory (SRAM) comprises a plurality of memory cells each having a pair of cross-coupled inverters, a first of the inverters being supplied by first and second power supply rails and a second of the inverters being supplied by third and fourth supply rails, an input of the second inverter being coupled to a first bit line via a first transistor; and a power supply circuit adapted to apply a first voltage difference across the first and second power supply rails and a second voltage difference across the third and fourth power supply rails, the second voltage difference being greater than the first voltage difference.


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