The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Apr. 05, 2011
Takayuki Kawahara, Higashiyamato, JP;
Riichiro Takemura, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Kiyoo Itoh, Higashikurume, JP;
Takayuki Kawahara, Higashiyamato, JP;
Riichiro Takemura, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Kiyoo Itoh, Higashikurume, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The disclosed semiconductor recording device achieves multi-valued reading and writing using a spin-injection magnetization-reversal tunneling magnetoresistive element (TMR element). A first current that has at least the same value as that of the element requiring the highest current to reverse the magnetization thereof among a plurality of TMR elements is, in the direction that causes reversal to either a parallel state or an anti-parallel state, applied to a memory cell having the plurality of TMR elements, and then a second current which is in the reverse direction from the first current and of which only the value needed to reverse the magnetoresistance state of at least one TMR element excluding the element requiring the maximum current among the plurality of TMR elements is applied to each, and multi-valued writing is performed.