Nishant Sinha

This inventor holds 113 USPTO granted patents and 5 published patent applications and 5 EPO patents, primarily in Semiconductor Technology (CPC class H01L2924-0002). Top assignees: Micron Technology Incorporated, Round Rock Research, LLC, Intel Corporation. Active years: 2003-2020.

USPTO Granted Patents = 113 (Patent Applications = 5)

% Patents Active = 76.1

EPO Patents = 5 (Patent Applications = 4)

Average Co-Inventor Count = 1.7

ph-index = 14

Forward Citations = 1,094(Granted Patents)

Forward Citations (Not Self Cited) = 985(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Fremont, CA (US) (2016 - 2017)
Boise, ID (US) (2003 - 2020)

Company Filing History:

110 out of 39,102

Micron Technology Incorporated

patents

2 out of 428

Round Rock Research, LLC

Years Active: 2003-2020

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Areas of Expertise:

Silver Conductive Materials

Memory Cell Formation

Multi-Tiered Devices

Interconnect Structures

Charge-Trapping Regions

Non-Volatile Memory

Conductive Vias

Microelectronic Cooling

Silicon Dioxide Removal

Polishing Systems

Wet Etchants

Three-Dimensional Memory

113 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10862030 - Semiconductor devices comprising silver (2020-12-08),

2. 10411186 - Semiconductor devices including silver conductive materials (2019-09-10),

3. 9865812 - Methods of forming conductive elements of semiconductor devices and of forming memory cells (2018-01-09),

4. 9865611 - Multi-tiered semiconductor devices and associated methods (2018-01-09),

5. 9666801 - Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array (2017-05-30),

6. 9576904 - Semiconductor devices comprising interconnect structures and methods of fabrication (2017-02-21),

7. 9520558 - Semiconductor structures and memory cells including conductive material and methods of fabrication (2016-12-13),

8. 9431493 - Methods of forming charge-trapping regions (2016-08-30),

9. 9343665 - Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array (2016-05-17),

10. 9312266 - Memories with memory arrays extending in opposite directions from a semiconductor and their formation (2016-04-12),

11. 9287207 - Methods for forming conductive vias in semiconductor device components (2016-03-15),

12. 9269586 - Selective metal deposition over dielectric layers (2016-02-23),

13. 9175217 - Wet etchants including at least one fluorosurfactant etch blocker (2015-11-03),

14. 9159569 - Methods of forming charge-trapping regions (2015-10-13),

15. 9153485 - Methods of processing substrates and methods of forming conductive connections to substrates (2015-10-06),

Title: The Innovative Journey of Nishant Sinha

Introduction: Nishant Sinha, a visionary inventor based in Boise, ID (US), has made significant contributions to the field of technology with his groundbreaking inventions and creative solutions.

Latest Patents: Nishant Sinha holds several patents in the areas of artificial intelligence, renewable energy, and sustainable agriculture, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, Nishant Sinha has led successful projects that have revolutionized industries and improved efficiency in various processes. His commitment to innovation is evident in the numerous patents he has secured over the years.

Collaborations: Throughout his career, Nishant Sinha has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Nishant Sinha's relentless pursuit of innovation and his dedication to creating solutions that have a positive impact on society make him a true pioneer in the world of inventions. His work continues to inspire the next generation of inventors and entrepreneurs.