The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Apr. 15, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Nishant Sinha, Boise, ID (US);

J. Neil Greeley, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 1/02 (2006.01); C11D 1/83 (2006.01); C11D 7/28 (2006.01); C11D 7/30 (2006.01); C09K 13/08 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); C09K 13/06 (2006.01);
U.S. Cl.
CPC ...
C09K 13/08 (2013.01); C09K 13/06 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01);
Abstract

Methods for preventing isotropic removal of materials at corners faulted by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.


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