Boise, ID, United States of America

J Neil Greeley


Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 214(Granted Patents)


Company Filing History:


Years Active: 2012-2020

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11 patents (USPTO):Explore Patents

Title: J Neil Greeley: Innovator in Semiconductor Technology

Introduction

J Neil Greeley is a prominent inventor based in Boise, ID (US), known for his significant contributions to semiconductor technology. With a total of 11 patents to his name, Greeley has made remarkable advancements in the field, particularly in methods of forming semiconductor device structures and capacitor structures.

Latest Patents

Greeley's latest patents focus on innovative methods for forming semiconductor device structures. One of his notable inventions involves creating a mold template with trenches within a mold material. This process allows for the formation of structures within the trenches, followed by a wet removal process to eliminate the mold template. A liquid material remains in the spaces between adjacent structures after this process. Subsequently, a polymer material is formed in these spaces, and a dry removal process is performed to remove the polymer material. These methods enhance the efficiency and effectiveness of semiconductor device manufacturing.

Career Highlights

Throughout his career, Greeley has been associated with Micron Technology Incorporated, where he has played a vital role in advancing semiconductor technologies. His work has not only contributed to the company's success but has also had a lasting impact on the industry as a whole.

Collaborations

Greeley has collaborated with several talented individuals in his field, including Dan B Millward and Timothy A Quick. These collaborations have fostered innovation and have led to the development of cutting-edge technologies in semiconductor manufacturing.

Conclusion

J Neil Greeley's contributions to semiconductor technology through his patents and collaborations highlight his status as a leading inventor in the field. His innovative methods continue to shape the future of semiconductor device structures and capacitor technologies.

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