The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

Feb. 16, 2016
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dan B. Millward, Boise, ID (US);

Timothy A. Quick, Boise, ID (US);

J. Neil Greeley, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/326 (2006.01); H01L 21/479 (2006.01); H01L 21/027 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); C08L 53/00 (2006.01); C09D 153/00 (2006.01); G03F 7/00 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0271 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C08L 53/00 (2013.01); C08L 53/005 (2013.01); C09D 153/00 (2013.01); C09D 153/005 (2013.01); G03F 7/0002 (2013.01); H01L 21/02323 (2013.01); H01L 21/28 (2013.01); H01L 29/06 (2013.01); Y10S 438/947 (2013.01); Y10S 977/888 (2013.01); Y10S 977/89 (2013.01);
Abstract

Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.


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