The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
May. 21, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Sanh D. Tang, Boise, ID (US);
John Zahurak, Eagle, ID (US);
Siddartha Kondoju, Boise, ID (US);
Haitao Liu, Meridian, ID (US);
Nishant Sinha, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 27/06 (2006.01); H01L 27/10 (2006.01); H01L 27/105 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11293 (2013.01); H01L 27/0688 (2013.01); H01L 27/101 (2013.01); H01L 27/105 (2013.01); H01L 27/1052 (2013.01); H01L 27/11206 (2013.01); H01L 27/11517 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 27/11563 (2013.01); H01L 27/11578 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H01L 21/823885 (2013.01);
Abstract
Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.