Nigel Chan

This inventor holds 30 USPTO granted patents and 2 published patent applications. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc., Infineon Technologies Ag. Active years: 2012-2026.

USPTO Granted Patents = 30 (Patent Applications = 2)

% Patents Active = 93.3

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 86(Granted Patents)

Location History:

Munich, DE (2012)
Dresden, DE (2013 - 2024)

Company Filing History:

Globalfoundries U.S. Inc.

patents

2 out of 15,005

Infineon Technologies Ag

patents

4. 1 out of 15

Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.

patents

Years Active: 2012-2026

Loading Chart...

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12538579 - Semiconductor structure including sectioned well region (2026-01-27),

2. 12453178 - IC structure for connected capacitances and method of forming same (2025-10-21),

3. 12046603 - Semiconductor structure including sectioned well region (2024-07-23),

4. 11488967 - Eight-transistor static random access memory cell (2022-11-01),

5. 11127860 - Extended-drain field-effect transistors including a floating gate (2021-09-21),

6. 10923482 - IC product with a novel bit cell design and a memory array comprising such bit cells (2021-02-16),

7. 10909298 - Well contact cell with doped tap region separated from active region, and methods to form same (2021-02-02),

8. 10811433 - High-voltage transistor device with thick gate insulation layers (2020-10-20),

9. 10593674 - Deep fence isolation for logic cells (2020-03-17),

10. 10559490 - Dual-depth STI cavity extension and method of production thereof (2020-02-11),

11. 10504906 - FinFET SRAM layout and method of making the same (2019-12-10),

12. 10418380 - High-voltage transistor device with thick gate insulation layers (2019-09-17),

13. 10396084 - Semiconductor devices including self-aligned active regions for planar transistor architecture (2019-08-27),

14. 10319827 - High voltage transistor using buried insulating layer as gate dielectric (2019-06-11),

15. 10311201 - Alignment key design rule check for correct placement of abutting cells in an integrated circuit (2019-06-04),

Title: Nigel Chan - Innovative Inventor from Dresden

Introduction: Nigel Chan is a renowned inventor based in Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Nigel Chan's most recent patents include advancements in renewable energy technologies, smart home devices, and medical equipment, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the innovation industry, Nigel Chan has successfully brought numerous ideas from concept to reality, earning him a reputation as a visionary inventor.

Collaborations: Throughout his career, Nigel Chan has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the market, solidifying his position as a key player in the innovation landscape.

Conclusion: Nigel Chan's passion for pushing the boundaries of technology and his relentless drive to create solutions for the future make him a standout figure in the world of inventions and innovations.