The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Apr. 29, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Germain Bossu, Dresden, DE;

Nigel Chan, Dresden, DE;

Assignee:

GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/02 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 27/0207 (2013.01); H01L 29/0843 (2013.01);
Abstract

Disclosed is an illustrative bit cell that includes a first inverter circuit that includes a first input node and a first output node and a second inverter circuit that includes a second input node and a second output node, wherein the first output node is coupled to the second input node and the second output node is coupled to the first input node. The bit cell also includes a first extension field effect transistor that includes a first gate structure, a first cell-internal S/D region and a first cell boundary node S/D region, wherein first cell-internal S/D region electrically terminates within the cell boundary. The first gate structure is electrically coupled to one of the first or second input nodes and it is also shorted to the first cell-internal S/D region.


Find Patent Forward Citations

Loading…