The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Sep. 12, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Ming-Cheng Chang, Dresden, DE;
Nigel Chan, Dresden, DE;
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Abstract
Structures for an extended-drain field-effect transistor and methods of forming an extended-drain field-effect transistor. A source region is coupled to a semiconductor layer, a drain region is coupled to the semiconductor layer, and a first gate structure is positioned over a channel region of the semiconductor layer. An extended drain region is positioned between the channel region and the drain region. The extended drain region includes a portion of the semiconductor layer between the first gate structure and the drain region. A second gate structure is arranged over the portion of the semiconductor layer.